NTMFD4C20N_16 Datasheet, PDF (1/12 Pages) ON Semiconductor – Dual N-Channel Power MOSFET

NTMFD4C20N
Dual N-Channel Power
MOSFET
30 V, High Side 18 A / Low Side 27 A, Dual
N−Channel SO8FL
Features
• Co−Packaged Power Stage Solution to Minimize Board Space
• Minimized Parasitic Inductances
• Optimized Devices to Reduce Power Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• System Voltage Rails
• Point of Load
www.onsemi.com
V_(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
R_DS(ON) MAX
7.3 mW @ 10 V
10.8 mW @ 4.5 V
3.4 mW @ 10 V
5.2 mW @ 4.5 V
I_D MAX
18 A
27 A
D1 (2, 3, 4, 9)
(1) G1
S1/D2 (10)
© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 4
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4
D1 3
D1 2
G1 1
9 10
D1 S1/D2
(Bottom View)
5 S2
6 S2
7 S2
8 G2
MARKING
DIAGRAM
1
DFN8
CASE 506BX
4C20N
AYWZZ
1
4C20N = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
Publication Order Number:
NTMFD4C20N/D