NTMD6P02R2G Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 6 A, 20 V, P−Channel SOIC−8, Dual

NTMD6P02, NVMD6P02
Power MOSFET
6 A, 20 V, P−Channel SOIC−8, Dual
Features
• Ultra Low R_DS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual SOIC−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• These Devices are Pb−Free and are RoHS Compliant
• NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS
http://onsemi.com
6 AMPERES, 20 VOLTS
P−Channel
D
G
Rating
Symbol Value Unit
S
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
V_DSS
−20
V
V_GS
"12
V
R_qJA
P_D
I_D
I_D
P_D
I_D
I_DM
62.5
2.0
−7.8
−5.7
0.5
−3.89
−40
°C/W
W
A
A
W
A
A
R_qJA
P_D
I_D
I_D
P_D
I_D
I_DM
98
1.28
−6.2
−4.6
0.3
−3.01
−35
°C/W
W
A
A
W
A
A
R_qJA
P_D
I_D
I_D
P_D
I_D
I_DM
T_J, T_stg
166
0.75
−4.8
−3.5
0.2
−2.48
−30
−55 to
+150
°C/W
W
A
A
W
A
A
°C
8
1
SOIC−8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
E6P02x
AYWW G
G
1
S1 G1 S2 G2
E6P02 = Specific Device Code
x
= Blank or S
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMD6P02R2G
Package
Shipping^†
SOIC−8 2500 / Tape & Reel
(Pb−Free)
Single Pulse Drain−to−Source Avalanche
E_AS
500 mJ
Energy − Starting T_J = 25°C (V_DD = −20 Vdc,
V_GS = −5.0 Vdc, Peak I_L = −5.0 Apk,
L = 40 mH, R_G = 25 W)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T_L
260 °C
NTMD6P02R2SG SOIC−8 2500 / Tape & Reel
(Pb−Free)
NVMD6P02R2G SOIC−8 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2012
1
December, 2012 − Rev. 4
Publication Order Number:
NTMD6P02R2/D