NTMD6P02R2 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual

NTMD6P02R2
Preferred Device
Power MOSFET
6 Amps, 20 Volts
P–Channel SO–8, Dual
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual SO–8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SO–8 Mounting Information Provided
Applications
• Power Management in Portable and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
VDSS
–20
V
Gate–to–Source Voltage – Continuous
VGS
"12
V
Thermal Resistance –
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
R_θJA
PD
ID
ID
PD
ID
IDM
62.5
2.0
–7.8
–5.7
0.5
–3.89
–40
°C/W
W
A
A
W
A
A
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
R_θJA
PD
ID
ID
PD
ID
IDM
98
1.28
–6.2
–4.6
0.3
–3.01
–35
°C/W
W
A
A
W
A
A
Thermal Resistance –
Junction–to–Ambient (Note 3.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
R_θJA
PD
ID
ID
PD
ID
IDM
166
0.75
–4.8
–3.5
0.2
–2.48
–30
°C/W
W
A
A
W
A
A
1. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz. Cu 0.06″ thick single
sided), t = 10 seconds.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz. Cu 0.06″ thick single
sided), t = steady state.
3. Minimum FR–4 or G–10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
6 AMPERES
20 VOLTS
RDS(on) = 33 mW
P–Channel
D
G
S
MARKING
DIAGRAM
8
SO–8, Dual
CASE 751
STYLE 11
E6P02
LYWW
1
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
Source–1
Gate–1
Source–2
Gate–2
18
27
36
45
Top View
Drain–1
Drain–1
Drain–2
Drain–2
ORDERING INFORMATION
Device
Package
Shipping
NTMD6P02R2
SO–8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 1
Publication Order Number:
NTMD6P02R2/D