NTMD6N03R2G Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8

NTMD6N03R2,
NVMD6N03R2
Power MOSFET
30 V, 6 A, Dual N--Channel SOIC--8
Features
 Designed for use in low voltage, high speed switching applications
 Ultra Low On--Resistance Provides
Higher Efficiency and Extends Battery Life
-- R_DS(on) = 0.024 Ω, V_GS = 10 V (Typ)
-- R_DS(on) = 0.030 Ω, V_GS = 4.5 V (Typ)
 Miniature SOIC--8 Surface Mount Package Saves Board Space
 Diode is Characterized for Use in Bridge Circuits
 Diode Exhibits High Speed, with Soft Recovery
 AEC Q101 Qualified -- NVMD6N03R2
 These Devices are Pb--Free and are RoHS Compliant
Applications
 DC--DC Converters
 Computers
 Printers
 Cellular and Cordless Phones
 Disk Drives and Tape Drives
MAXIMUM RATINGS (T_J = 25C unless otherwise noted)
Rating
Symbol Value Unit
Drain--to--Source Voltage
Gate--to--Source Voltage -- Continuous
Drain Current
-- Continuous @ T_A = 25C
-- Single Pulse (tp  10 ms)
Total Power Dissipation
@ T_A = 25C (Note 1)
@ T_A = 25C (Note 2)
Operating and Storage Temperature
Range
V_DSS
V_GS
I_D
I_DM
P_D
T_J, T_stg
30
20
6.0
30
2.0
1.29
--55 to
+150
Volts
Volts
Adc
Apk
Watts
C
Single Pulse Drain--to--Source Avalanche
Energy -- Starting T_J = 25C
(V_DD = 30 Vdc, V_GS = 5.0 Vdc,
V_DS = 20 Vdc, Peak I_L = 9.0 Apk,
L = 10 mH, R_G = 25 Ω)
Thermal Resistance
-- Junction--to--Ambient (Note 1)
-- Junction--to--Ambient (Note 2)
E_AS
R_θJA
325
mJ
C/W
62.5
97
Maximum Lead Temperature for Soldering
T_L
Purposes for 10 seconds
260
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 pad size, t  10 s
2. When surface mounted to an FR4 board using 1 pad size, t = steady state
 Semiconductor Components Industries, LLC, 2011
1
October, 2011 -- Rev. 3
http://onsemi.com
V_DSS
30 V
R_DS(ON) Typ
24 mΩ @ V_GS = 10 V
I_D Max
6.0 A
N--Channel
D
D
G
G
S
S
8
1
SOIC--8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
E6N03
AYWW G
G
1
S1 G1 S2 G2
E6N03 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMD6N03R2G
SOIC--8
(Pb--Free)
2500 / Tape &
Reel
NVMD6N03R2G SOIC--8
(Pb--Free)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMD6N03R2/D