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NTMD6N03R2 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET
NTMD6N03R2
Power MOSFET
30 V, 6 A, Dual N−Channel SOIC−8
Features
• Designed for use in low voltage, high speed switching applications
• Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life
− RDS(on) = 0.024 W, VGS = 10 V (Typ)
− RDS(on) = 0.030 W, VGS = 4.5 V (Typ)
• Miniature SOIC−8 Surface Mount Package Saves Board Space
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• Pb−Free Package is Available
Applications
• DC−DC Converters
• Computers
• Printers
• Cellular and Cordless Phones
• Disk Drives and Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp ≤ 10 ms)
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
30
"20
Volts
Volts
6.0
30
2.0
1.29
−55 to
+150
Adc
Apk
Watts
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc,
VDS = 20 Vdc, Peak IL = 9.0 Apk,
L = 10 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
EAS
RqJA
325
mJ
°C/W
62.5
97
Maximum Lead Temperature for Soldering
TL
Purposes for 10 seconds
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s
2. When surface mounted to an FR4 board using 1″ pad size, t = steady state
http://onsemi.com
VDSS
30 V
RDS(ON) Typ
24 mW @ VGS = 10 V
ID Max
6.0 A
N−Channel
D
D
G
G
S
S
8
1
SOIC−8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
E6N03
AYWW G
G
1
S1 G1 S2 G2
E6N03 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMD6N03R2
SOIC−8 2500/Tape & Reel
NTMD6N03R2G SOIC−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 2
Publication Order Number:
NTMD6N03R2/D