NTMD6N02R2_05 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 6.0 Amps, 20 Volts

NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
N−Channel Enhancement Mode
Dual SO−8 Package
Features
• Ultra Low R_DS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual SOIC−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SOIC−8 Mounting Information Provided
• Pb−Free Package is Available
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products,
for example, Computers, Printers, Cellular and Cordless Telephones
and PCMCIA Cards
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
V_DSS
20
Drain−to−Gate Voltage (R_GS = 1.0 MW)
V_DGR
20
Gate−to−Source Voltage − Continuous
V_GS
"12
Thermal Resistance,
Junction−to−Ambient (Note 1)
R_qJA
62.5
Total Power Dissipation @ T_A = 25°C
P_D
2.0
Continuous Drain Current @ T_A = 25°C
I_D
6.5
Continuous Drain Current @ T_A = 70°C
I_D
5.5
Pulsed Drain Current (Note 4)
I_DM
50
Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
102
Total Power Dissipation @ T_A = 25°C
P_D
1.22
Continuous Drain Current @ T_A = 25°C
I_D
5.07
Continuous Drain Current @ T_A = 70°C
I_D
4.07
Pulsed Drain Current (Note 4)
I_DM
40
Thermal Resistance
Junction−to−Ambient (Note 3)
R_qJA
172
Total Power Dissipation @ T_A = 25°C
P_D
0.73
Continuous Drain Current @ T_A = 25°C
I_D
3.92
Continuous Drain Current @ T_A = 70°C
I_D
3.14
Pulsed Drain Current (Note 4)
I_DM
30
1. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t < 10 seconds.
2. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
Unit
V
V
V
°C/W
W
A
A
A
°C/W
W
A
A
A
°C/W
W
A
A
A
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 3
http://onsemi.com
V_DSS
20 V
R_DS(ON) TYP
35 mW @ V_GS = 4.5 V
I_D MAX
6.0 A
N−Channel
D
G
8
1
S
SOIC−8
CASE 751
STYLE 11
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Source 1
2
Gate 1
3
Source 2
4
Gate 2
8
Drain 1
7
Drain 1
6
Drain 2
5
Drain 2
(Top View)
E6N02 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMD6N02R2 SOIC−8 2500/Tape & Reel
NTMD6N02R2G SOIC−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMD6N02R2/D