NTMD5838NL Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 11.6 A, N−Channel, SO−8 Optimized Gate Charge

NTMD5838NL
Power MOSFET
40 V, 8.9 A, 25 mW, Dual N−Channel SO−8
Features
• Low R_DS(on)
• Low Capacitance
• Optimized Gate Charge
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
Power Dissipation
R_qJA (Note 1)
Continuous Drain
Current R_qJA
(Note 1)
Power Dissipation
R_qJA (Note 1)
Pulsed Drain
Current
T_A = 25°C
Steady
State
T_A = 70°C
T_A = 25°C
T_A = 70°C
T_A = 25°C
t ≤10 s
T_A = 70°C
T_A = 25°C
T_A = 70°C
t_p = 10 ms
V_DSS
V_GS
I_D
P_D
I_D
P_D
I_DM
40
V
±20
V
7.4
A
5.9
2.1
W
1.3
8.9
A
7.1
3.0
W
1.9
35
A
Operating Junction and Storage
Temperature
T_J, T_STG −55 to °C
+150
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
I_S
EAS
IAS
7.0
A
20
mJ
21
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient Steady State
(Notes 1 & 3)
R_qJA
58
Junction−to−Ambient − t ≤10 s (Note 1)
R_qJA
40
°C/W
Junction−to−Ambient Steady State (Note 2)
R_qJA
106
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm²) pad size.
3. Both channels receive equivalent power dissipation
1 W applied on each channel: T_J = 2 W * 58°C/W + 25°C = 141°C
http://onsemi.com
V_(BR)DSS
40 V
R_DS(ON) MAX
25 mW @ 10 V
30.8 mW @ 4.5 V
I_D MAX
8.9 A
N−CHANNEL MOSFET
D
D
G
G
S
S
MARKING DIAGRAM/
PIN ASSIGNMENT
D1 D1 D2 D2
8
SO−8
CASE 751
STYLE 11
D5838N
AYWW
G
1
S1 G1 S2 G2
(Top View)
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMD5838NLR2G SO−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
April, 2011 − Rev. 0
Publication Order Number:
NTMD5838NL/D