NTMD5836NL Datasheet, PDF (1/10 Pages) ON Semiconductor – Power MOSFET 40 V, Dual N−Channel, SOIC−8 Optimized Gate Charge

NTMD5836NL
Power MOSFET
40 V, Dual N−Channel, SOIC−8
Features
• Asymmetrical N Channels
• Low R_DS(on)
• Low Capacitance
• Optimized Gate Charge
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Channel 1
V_(BR)DSS
40 V
R_DS(on) Max
12 mW @ 10 V
I_D Max
(Notes 1 and 2)
11 A
16 mW @ 4.5 V
Channel 2
40 V
25 mW @ 10 V
6.5 A
30.8 mW @ 4.5 V
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces)
2. Only selected channel is been powered
1W applied on channel 1: T_J = 1 W * 85°C/W + 25°C = 110°C
http://onsemi.com
N−Channel 1
D1
N−Channel 2
D2
G1
G2
S1
S2
8
1
SOIC−8
CASE 751
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
5836NL
AYWW G
G
1
S1 G1 S2 G2
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMD5836NLR2G SOIC−8
(Pb−Free)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2011
1
March, 2011 − Rev. 0
Publication Order Number:
NTMD5836NL/D