NTMD4N03R2G Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 4 A, 30 V, N−Channel SO−8 Dual

NTMD4N03, NVMD4N03
Power MOSFET
4 A, 30 V, N−Channel SO−8 Dual
Features
• Designed for use in low voltage, high speed switching applications
• Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life
− R_DS(on) = 0.048 W, V_GS = 10 V (Typ)
− R_DS(on) = 0.065 W, V_GS = 4.5 V (Typ)
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Computers
• Printers
• Cellular and Cordless Phones
• Disk Drives and Tape Drives
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T_A = 25°C
− Single Pulse (tp ≤ 10 ms)
Total Power Dissipation
@ T_A = 25°C (Note 1)
Operating and Storage
Temperature Range
V_DSS
V_GS
I_D
I_DM
P_D
30
V
"20
V
4.0
Adc
12
Apk
2.0
W
T_J, T_stg −55 to
°C
+150
Single Pulse Drain−to−Source
Avalanche Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 5.0 Vdc,
Peak I_L = 4.45 Apk, L = 8 mH,
R_G = 25 W)
Thermal Resistance
− Junction−to−Ambient (Note 1)
E_AS
R_qJA
80
mJ
62.5 °C/W
Maximum Lead Temperature for
Soldering Purposes for 10 seconds
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s
http://onsemi.com
V_DSS
30 V
R_DS(ON) Typ
48 mW @ V_GS = 10 V
I_D Max
4.0 A
N−Channel
D
D
G
G
S
S
8
1
SOIC−8
SUFFIX NB
CASE 751
STYLE 11
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
E4N03
AYWW G
G
1
S1 G1 S2 G2
E4N03 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
Device
NTMD4N03R2G
NVMD4N03R2G*
Package
SOIC−8
(Pb−Free)
SOIC−8
(Pb−Free)
Shipping^†
2500 / Tape &
Reel
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2013
1
August, 2013 − Rev. 4
Publication Order Number:
NTMD4N03R2/D