 English |
|
|
|
|
|
|
|
| NTMD4102PR2 Datasheet, PDF (1/4 Pages) ON Semiconductor – Trench Power MOSFET | |||
| |||
|
NTMD4102PR2
Product Preview
Trench Power MOSFET
-20 V, P-Channel, SO-8 Dual
This P-Channel device was designed using ON Semiconductorâs
leading edge trench technology for low RDS(on) performance in the
SO-8 dual package for high power and current handling capability.
The low RDS(on) performance is particularly suited for game systems,
notebook and desktop computers, and printers.
Features & Benefits
⢠Leading -20 V Trench for Low RDS(on)
⢠SO-8 Package Provides Excellent Thermal Performance
⢠Surface Mount SO-8 Package Saves Board Space
⢠Pb Free Package for Green Manufacturing
Applications
⢠Load/Power Management
⢠Battery Switching for Multi Cell Li-Ion
⢠Buck-Boost Synchronous Rectification
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-to-Source Voltage
VDSS
-20
V
Gate-to-Source Voltage
VGS
±20
V
Drain Current
- Continuous @ TA = 25°C (Note 1)
- Pulsed Drain Current (t = 10 µs)
A
ID
-6.5
IDM
-30
Steady State Power Dissipation
@ TA = 25°C (Note 1)
PD
1.1
W
Operating Junction and Storage Temperature TJ, Tstg -55 to °C
Range
150
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 seconds)
IS
-0.9
A
TL
260
°C
THERMAL RESISTANCE RATINGS
Thermal Resistance
- Junction- to- Ambient - Steady State (Note 1)
- Junction-to-Ambient - t ⤠10 s (Note 1)
- Junction-to-Lead - Steady State (Note 2)
RqJA
RqJA
RqJL
TBD
TBD
TBD
°C/W
1. Surface-mounted on FR4 board using 1â³ sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size
(Cu area = TBD in sq)
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
VBR(DSS) = -20 VOLTS
RDS(on) (max) = 19 mW @ -10 V
ID(max) (Note 1) = -8.5 A
RDS(on) (max) = 30 mW @ -4.5 V
ID(max) (Note 1) = -6.5 A
P-Channel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
8
1
SO-8
CASE 751
STYLE 12
Source-1
Gate-1
Source-2
Gate-2
1
8
Drain-1
Drain-1
Drain-2
Drain-2
Top View
XXX
A
L
Y
W
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMD4102PR2
SO-8
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
March, 2003 - Rev. 0
Publication Order Number:
NTMD4102PR2/D
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese