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NTMD3P03R2_13 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET Dual P-Channel SOIC-8 | |||
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NTMD3P03, NVMD3P03
Power MOSFET
-3.05 Amps, -30 Volts
Dual PâChannel SOICâ8
Features
⢠High Efficiency Components in a Dual SOICâ8 Package
⢠High Density Power MOSFET with Low RDS(on)
⢠Miniature SOICâ8 Surface Mount Package â Saves Board Space
⢠Diode Exhibits High Speed with Soft Recovery
⢠IDSS Specified at Elevated Temperature
⢠Avalanche Energy Specified
⢠Mounting Information for the SOICâ8 Package is Provided
⢠AECâQ101 Qualified â NVMD3P03R2G
⢠These Devices are PbâFree and are RoHS Compliant
Applications
⢠DCâDC Converters
⢠Low Voltage Motor Control
⢠Power Management in Portable and BatteryâPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
DrainâtoâSource Voltage
GateâtoâSource Voltage â Continuous
VDSS
â30
VGS
±20
Thermal Resistance â
JunctionâtoâAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
171
0.73
â2.34
â1.87
â8.0
Thermal Resistance â
JunctionâtoâAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
100
1.25
â3.05
â2.44
â12
Thermal Resistance â
JunctionâtoâAmbient (Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
62.5
2.0
â3.86
â3.1
â15
Operating and Storage
Temperature Range
TJ, Tstg
â55 to
+150
Unit
V
V
°C/W
W
A
A
A
°C/W
W
A
A
A
°C/W
W
A
A
A
°C
Single Pulse DrainâtoâSource Avalanche
EAS
Energy â Starting TJ = 25°C
(VDD = â30 Vdc, VGS = â4.5 Vdc, Peak IL
= â7.5 Apk, L = 5 mH, RG = 25 W)
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8â³ from case for 10 seconds
140
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FRâ4 or Gâ10 PCB, t = Steady State.
2. Mounted onto a 2â³ square FRâ4 Board (1 in sq, 2 oz Cu 0.06â³ thick
single sided), t = steady state.
3. Mounted onto a 2â³ square FRâ4 Board (1 in sq, 2 oz Cu 0.06â³ thick
single sided), t ⤠10 seconds.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
VDSS
â30 V
RDS(ON) Typ
85 mW @ â10 V
ID Max
â3.05 A
PâChannel
D
G
S
8
1
SOICâ8
SUFFIX NB
CASE 751
STYLE 11
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
ED3P03
AYWW G
G
1
S1 G1 S2 G2
ED3P03= Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
Device
NTMD3P03R2G
Package
SOICâ8
(PbâFree)
Shippingâ
2500 / Tape &
Reel
NVMD3P03R2G SOICâ8 2500 / Tape &
(PbâFree)
Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2013
1
August, 2013 â Rev. 4
Publication Order Number:
NTMD3P03R2/D
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