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NTMD2P01R2 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET −2.3 Amps, −16 Volts | |||
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NTMD2P01R2
Power MOSFET
â2.3 Amps, â16 Volts
Dual SOICâ8 Package
Features
⢠High Efficiency Components in a Single SOICâ8 Package
⢠High Density Power MOSFET with Low RDS(on)
⢠Logic Level Gate Drive
⢠SOICâ8 Surface Mount Package,
Mounting Information for SOICâ8 Package Provided
⢠PbâFree Packages are Available
Applications
⢠Power Management in Portable and BatteryâPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage â Continuous
Thermal Resistance â JunctionâtoâAmbient
(Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 4)
Thermal Resistance â JunctionâtoâAmbient
(Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 4)
Thermal Resistance â JunctionâtoâAmbient
(Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 4)
Operating and Storage
Temperature Range
VDSS
â16
V
VGS
"10
V
RqJA
PD
ID
ID
IDM
175
0.71
â2.3
â1.45
â9.0
°C/W
W
A
A
A
RqJA
PD
ID
ID
IDM
105
1.19
â2.97
â1.88
â12
°C/W
W
A
A
A
RqJA
PD
ID
ID
IDM
TJ, Tstg
62.5
2.0
â3.85
â2.43
â15
â55 to
+150
°C/W
W
A
A
A
°C
Single Pulse DrainâtoâSource Avalanche
EAS
Energy â Starting TJ = 25°C
(VDD = â16 Vdc, VGS = â4.5 Vdc, Peak IL
= â5.0 Apk, L = 28 mH, RG = 25 W)
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8â³ from case for 10 seconds
350
mJ
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FRâ4 or Gâ10 PCB, Steady State.
2. Mounted onto a 2â³ square FRâ4 Board (1 in sq, 2 oz Cu 0.06â³ thick
single sided), Steady State.
3. Mounted onto a 2â³ square FRâ4 Board (1 in sq, 2 oz Cu 0.06â³ thick
single sided), t ⤠10 seconds.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
VDSS
â16 V
RDS(ON) Typ
100 mW @ â4.5 V
ID Max
â2.3 A
PâChannel
D
G
S
8
1
SOICâ8
SUFFIX NB
CASE 751
STYLE 11
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
ED2P01
AYWW G
G
1
S1 G1 S2 G2
ED2P01= Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
Device
NTMD2P01R2
Package
Shippingâ
SOICâ8 2500/Tape & Reel
NTMD2P01R2G
SOICâ8 2500/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 â Rev. 2
Publication Order Number:
NTMD2P01R2/D
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