NTMD2C02R2G Datasheet, PDF (1/12 Pages) ON Semiconductor – Power MOSFET 2 Amps, 20 Volts

NTMD2C02R2
Preferred Device
Power MOSFET
2 Amps, 20 Volts
Complementary SOIC−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
Features
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SOIC−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Mounting Information for SOIC−8 Package Provided
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Drain−to−Source Voltage
N−Channel
P−Channel
Gate−to−Source Voltage
Drain Current − Continuous
− Pulsed
N−Channel
P−Channel
N−Channel
P−Channel
Operating and Storage Temperature Range
Total Power Dissipation @ T_A= 25°C
(Note 2)
Thermal Resistance − Junction to Ambient
(Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds.
V_DSS
V_GS
I_D
I_DM
T_J and
T_stg
P_D
R_qJA
T_L
Vdc
20
20
±12 Vdc
5.2
A
3.4
48
17
−55 to °C
150
2.0
W
62.5 °C/W
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES
20 VOLTS
R_DS(on) = 43 mW (N−Channel)
R_DS(on) = 120 mW (P−Channel)
N−Channel
D
P−Channel
D
G
G
S
8
1
SOIC−8
CASE 751
STYLE 14
S
MARKING DIAGRAM &
PIN ASSIGNMENT
ND ND PD PD
8
D2C02x
AYWW G
G
1
NS NG PS PG
D2C02 = Specific Device Code
x
= Blank or S
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMD2C02R2
Package
Shipping^†
SOIC−8 2500/Tape & Reel
NTMD2C02R2G
SOIC−8 2500/Tape & Reel
(Pb−Free)
NTMD2C02R2SG SOIC−8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 1
Publication Order Number:
NTMD2C02R2/D