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| NTLUF4189NZ Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package | |||
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NTLUF4189NZ
Power MOSFET and
Schottky Diode
30 V, NâChannel with 0.5 A Schottky
Barrier Diode, 1.6 x 1.6 x 0.55 mm
mCoolt Package
Features
⢠Low Qg and Capacitance to Minimize Switching Losses
⢠Low Profile UDFN 1.6x1.6 mm for Board Space Saving
⢠Low VF Schottky Diode
⢠ESD Protected Gate
⢠This is a HalideâFree Device
⢠This is a PbâFree Device
Applications
⢠DC-DC Boost Converter
⢠Color Display and Camera Flash Regulators
⢠Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGS
±8.0
V
Continuous Drain Steady TA = 25°C
ID
Current (Note 1)
State
TA = 85°C
1.5
A
1.1
t ⤠5 s TA = 25°C
1.9
Power Dissipation Steady TA = 25°C
PD
(Note 1)
State
0.8
W
t ⤠5 s TA = 25°C
1.3
Continuous Drain Steady TA = 25°C
ID
Current (Note 2)
State
TA = 85°C
1.2
A
0.9
Power Dissipation (Note 2)
TA = 25°C
PD
0.5
W
Pulsed Drain Current
tp = 10 ms
IDM
8.0
A
MOSFET Operating Junction and Storage
Temperature
TJ,
-55 to °C
TSTG
150
Schottky Operating Junction & Storage
Temperature
TJ,
-55 to °C
TSTG
125
Source Current (Body Diode) (Note 2)
IS
1.5
A
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
TL
260
°C
Gate-to-Source ESD Rating
(HBM) per JESD22âA114F
ESD
1000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2009
1
March, 2009 â Rev. 1
http://onsemi.com
V(BR)DSS
30 V
MOSFET
RDS(on) MAX
200 mW @ 4.5 V
250 mW @ 3.0 V
350 mW @ 2.5 V
VR MAX
30 V
SCHOTTKY DIODE
VF TYP
0.52 V
ID MAX
1.5 A
0.5 A
0.5 A
IF MAX
0.5 A
D
A
G
S
NâChannel MOSFET
K
Schottky Diode
MARKING
DIAGRAM
6
UDFN6
CASE 517AT
1
AA MG
1
mCOOLt
G
AA = Specific Device Code
M = Date Code
G = PbâFree Package
PIN CONNECTIONS
A1
K
6K
N/C 2
D3
5G
D
4S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTLUF4189NZ/D
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