NTLTS3107P_05 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET -20 V, -8.3 A, Single P-Channel,Micro8 Leadless Package

NTLTS3107P
Power MOSFET
−20 V, −8.3 A, Single P−Channel,
Micro8 Leadless Package
Features
• Low R_DS(on) for Extended Battery Life
• Surface Mount Micro8 Leadless for Improved Thermal Performance
• Low Profile (<1.0 mm) Optimal for Portable Designs
• Low Turn−On Voltage
• This is a Pb−Free Device
Applications
• Optimized for Load Management Applications
• Charge Control in Battery Powered Systems
• Cell Phones, DSC, Notebooks, Portable Games, etc.
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady State
t v 10 s
Steady State
t v 10 s
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_A = 25°C
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady State
T_A = 25°C
T_A = 85°C
T_A = 25°C
V_DSS
V_GS
I_D
P_D
I_D
P_D
−20 V
$8.0 V
−8.3 A
−6.0
−12
1.6 W
3.3
−5.9 A
−3.7
0.8 W
Pulsed Drain
Current (Note 1)
t_p = 10 ms
I_DM
−25 A
Operating Junction and Storage Temperature
T_J, T_STG −55 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
I_S
−1.6 A
T_L
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R_qJA
80 °C/W
Junction−to−Ambient – t v 10 s (Note 1)
R_qJA
38 °C/W
Junction−to−Ambient – Steady State (Note 2)
R_qJA
160 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq. in. pad size
(Cu. area = 1.127 sq. in. [1 oz] including traces).
2. Surface−mounted on FR4 board using minimum recommended pad size
(Cu. area = TBD sq. in.).
http://onsemi.com
V_(BR)DSS
−20 V
R_DS(on) TYP
12.2 mW @ −4.5 V
15.6 mW @ −2.5 V
26.2 mW @ −1.8 V
I_D MAX
−8.3 A
P−Channel MOSFET
S
G
D
MARKING
DIAGRAM
1
Micro8 Leadless
CASE 846C
1 ₃₁₀₇
AYWW
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source
2 Source
3 Source
4 Gate
(Bottom View)
ORDERING INFORMATION
Device
Package
Shipping^†
NTLTS3107PR2G ^Micro8 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 0
Publication Order Number:
NTLTS3107P/D