NTLTD7900ZR2_06 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 9 A, 20 V, Logic Level, N-Channel Micro8 TM Leadless

NTLTD7900ZR2
Power MOSFET
9 A, 20 V, Logic Level, N−Channel
Micro8] Leadless
EZFETs™ are an advanced series of Power MOSFETs which
contain monolithic back−to−back Zener diodes. These Zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R_DS(on) and true
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are DC−DC converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Features
• Pb−Free Package is Available
Applications
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 4000 V Human Body Model
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive − Can be Driven by Logic ICs
• Micro8 Leadless Surface Mount Package − Saves Board Space
• I_DSS Specified at Elevated Temperature
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Steady
Rating
Symbol 10 Sec State Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain Current (Note 1)
I_D
T_A = 25°C
T_A = 85°C
A
9.0
6.0
6.4
4.3
Pulsed Drain Current
(tp v 10 ms)
I_DM
30
A
Continuous Source−Diode
Conduction (Note 1)
I_s
2.9
1.4
A
Total Power Dissipation (Note 1)
T_A = 25°C
T_A = 85°C
Operating Junction and Storage
Temperature Range
Thermal Resistance (Note 1)
Junction−to−Ambient
P_D
T_J, T_stg
R_qJA
W
3.2
1.5
1.7
0.79
−55 to 150
°C
38
82 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to 1″ x 1″ FR−4 board.
http://onsemi.com
9 AMPERES
20 VOLTS
R_DS(on) = 26 mW
(V_GS = 4.5 V, I_D = 6.5 A)
R_DS(on) = 31 mW
(V_GS = 2.5 V, I_D = 5.8 A)
D
D
2.4 kW
G₁
2.4 kW
G₂
S₁
N−Channel
S₂
N−Channel
MARKING DIAGRAM
1
Micro8 LEADLESS
CASE 846C
1 ₇₉₀₀
AYWW
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source 1
2 Gate 1
3 Source 2
4 Gate 2
(Bottom View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 6
Publication Order Number:
NTLTD7900ZR2/D