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NTLTD7900ZR2 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 9 A, 20 V, Logic Level, N-Channel Micro8™ Leadless
NTLTD7900ZR2
Power MOSFET
9 A, 20 V, Logic Level, N--Channel
Micro8™ Leadless
This advanced Power MOSFET contains monolithic back--to--back
Zener diodes. These Zener diodes provide protection against ESD and
unexpected transients. These miniature surface mount MOSFETs
feature ultra low RDS(on) and true logic level performance. This device
is designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are DC--DC
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
Features
• Pb--Free Package is Available
Applications
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 4000 V Human Body Model
• Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive -- Can be Driven by Logic ICs
• Micro8 Leadless Surface Mount Package -- Saves Board Space
• IDSS Specified at Elevated Temperature
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Steady
Rating
Symbol 10 Sec State Unit
Drain--to--Source Voltage
Gate--to--Source Voltage
VDSS
20
V
VGS
±12
V
Continuous Drain Current (Note 1)
ID
TA = 25°C
TA = 85°C
A
9.0
6.0
6.4
4.3
Pulsed Drain Current
(tp ≤ 10 ms)
IDM
30
A
Continuous Source--Diode
Conduction (Note 1)
Is
2.9
1.4
A
Total Power Dissipation (Note 1)
PD
W
TA = 25°C
3.2
1.5
TA = 85°C
1.7
0.79
Operating Junction and Storage
TJ, Tstg
--55 to 150
°C
Temperature Range
Thermal Resistance (Note 1)
Junction--to--Ambient
RθJA
38
82
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to 1″ x 1″ FR--4 board.
http://onsemi.com
9 AMPERES
20 VOLTS
RDS(on) = 26 mΩ
(VGS = 4.5 V, ID = 6.5 A)
RDS(on) = 31 mΩ
(VGS = 2.5 V, ID = 5.8 A)
D
D
2.4 kΩ
G1
2.4 kΩ
G2
S1
N--Channel
S2
N--Channel
MARKING DIAGRAM
1
Micro8 LEADLESS
CASE 846C
1 7900
AYWW
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb--Free Package
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source 1
2 Gate 1
3 Source 2
4 Gate 2
(Bottom View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 -- Rev. 7
Publication Order Number:
NTLTD7900ZR2/D
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