NTLTD7900N Datasheet, PDF (1/6 Pages) ON Semiconductor – N−Channel Enhancement−Mode Silicon Gate

NTLTD7900N
Power MOSFET
8.5 A, 20 V, Logic Level, N−Channel
Micro8] Leadless
EZFETs™ are an advanced series of Power MOSFETs which
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R_DS(on) and true
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Applications
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 4000 V Human Body Model
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive − Can be Driven by Logic ICs
• Micro8 Leadless Surface Mount Package − Saves Board Space
• I_DSS Specified at Elevated Temperature
• Pb−Free Package is Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Steady
Rating
Symbol 10 Secs State Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain Current (Note 1)
I_D
T_A = 25°C
T_A = 85°C
A
8.5
6.0
6.1
4.2
Pulsed Drain Current
(tp v 600 ms)
I_DM
30
A
Continuous Source−Diode
Conduction (Note 1)
I_s
2.9
1.4
A
Total Power Dissipation (Note 1)
P_D
W
T_A = 25°C
3.1
1.5
T_A = 85°C
1.6
0.79
Operating Junction and Storage
T_J, T_stg
−55 to 150
°C
Temperature Range
Thermal Resistance (Note 1)
Junction−to−Ambient
R_qJA
40
82 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to 1″ x 1″ FR−4 board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V_(BR)DSS
20 V
R_DS(on) TYP
20 mW @ 4.5 V
22 mW @ 2.5 V
I_D MAX
8.5 A
D
D
2.4 kW
G₁
2.4 kW
G₂
S₁
N−Channel
S₂
N−Channel
MARKING DIAGRAM
1
Micro8 Leadless
CASE 846C
1 _790N
AYWW
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source 1
2 Gate 1
3 Source 2
4 Gate 2
(Bottom View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 1
Publication Order Number:
NTLTD7900N/D