NTLJS3113PTAG Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NTLJS3113P
Power MOSFET
−20 V, −7.7 A, mCoolt Single P−Channel,
2x2 mm, WDFN Package
Features
• Recommended Replacement Device − NTLUS3A40P
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• 2x2 mm Footprint Same as SC−88 Package
• Lowest R_DS(on) Solution in 2x2 mm Package
• 1.5 V R_DS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters (Buck and Boost Circuits)
• Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
• High Side Load Switch
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
Continuous Drain
Current (Note 1)
Steady ^TA ^{= 25°C}
I_D
State _{TA = 85°C}
±8.0
V
−5.8
A
−4.4
Power Dissipation
(Note 1)
t ≤ 5 s T_A = 25°C
Steady
P_D
State _{TA = 25°C}
t ≤5 s
−7.7
1.9
W
3.3
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
T_A = 25°C
I_D
Steady T_A = 85°C
State
T_A = 25°C
P_D
−3.5
A
−2.5
0.7
W
Pulsed Drain Current
t_p = 10 ms
I_DM
−23
A
Operating Junction and Storage Temperature T_J, T_STG −55 to °C
150
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
−2.8
A
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm², 2 oz Cu).
http://onsemi.com
V_(BR)DSS
−20 V
R_DS(on) MAX
40 mW @ −4.5 V
50 mW @ −2.5 V
75 mW @ −1.8 V
200 mW @ −1.5 V
I_D MAX (Note 1)
−7.7 A
S
G
S
Pin 1
D
P−CHANNEL MOSFET
D
WDFN6
CASE 506AP
MARKING
DIAGRAM
1
2
J8MG
6
5
3^G 4
J8 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
D2
G3
D
S
6D
5D
4S
(Top View)
ORDERING INFORMATION
Device
Package
Shipping^†
NTLJS3113PT1G
NTLJS3113PTAG
WDFN6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
March, 2011 − Rev. 5
Publication Order Number:
NTLJS3113P/D