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NTLJS2103P_11 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET | |||
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NTLJS2103P
Power MOSFET
â12 V, â7.7 A, mCoolt Single PâChannel,
2x2 mm, WDFN Package
Features
⢠Recommended Replacement Device â NTLUS3A40P
⢠WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
⢠2x2 mm Footprint Same as SCâ88 Package
⢠Lowest RDS(on) Solution in 2x2 mm Package
⢠1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
⢠Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
⢠High Side Load Switch
⢠DCâDC Converters (Buck and Boost Circuits)
⢠Optimized for Battery and Load Management Applications in
Portable Equipment
⢠LiâIon Battery Linear Mode Charging
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
â12
V
GateâtoâSource Voltage
VGS
±8.0
V
Continuous Drain
Current (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
â5.9
A
â4.2
t ⤠5 s TA = 25°C
â7.7
Power Dissipation
(Note 1)
Steady
PD
State TA = 25°C
t â¤5 s
1.9
W
3.3
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
TA = 25°C
ID
Steady TA = 85°C
State
TA = 25°C
PD
â3.5
A
â2.5
0.7
W
Pulsed Drain Current
tp = 10 ms
IDM
â24
A
Operating Junction and Storage Temperature TJ, TSTG â55 to °C
150
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
â2.7
A
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm2, 2 oz Cu).
http://onsemi.com
V(BR)DSS
â12 V
RDS(on) TYP
25 mW @ â4.5 V
35 mW @ â2.5 V
45 mW @ â1.8 V
60 mW @ â1.5 V
95 mW @ â1.2 V
ID MAX (Note 1)
â5.9 A
â5.3 A
â2.0 A
â1.0 A
â0.2 A
S
G
PâCHANNEL MOSFET
S
Pin 1
D
D
MARKING
DIAGRAM
WDFN6
CASE 506AP
1
2
J7MG
6
5
3G 4
J7 = Specific Device Code
M = Date Code
G = PbâFree Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
6D
D2
G3
D
S
5D
4S
(Top View)
ORDERING INFORMATION
Device
Package
Shippingâ
NTLJS2103PTAG WDFN6 3000/Tape & Reel
(PbâFree)
NTLJS2103PTBG WDFN6 3000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
March, 2011 â Rev. 3
Publication Order Number:
NTLJS2103P/D
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