NTLJF3118N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package

NTLJF3118N
Power MOSFET and
Schottky Diode
20 V, 4.6 A, mCool] N−Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm
WDFN Package
Features
• WDFN 2x2 mm Package Provides Exposed Drain Pad for
Excellent Thermal Conduction
• Footprint Same as SC−88 Package
• 1.8 V V_GS Rated R_DS(on)
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• Low VF 2 A Schottky Diode
• This is a Pb−Free Device
Applications
• DC−DC Boost/Buck Converter
• Low Voltage Hard Disk DC Power Source
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±12 V
Continuous Drain Current _Steady T_A = 25°C
I_D
(Note 1)
State _{TA = 85°C}
3.8
A
2.8
t ≤ 5 s T_A = 25°C
4.6
Power Dissipation
(Note 1)
Steady
P_D
State _{TA = 25°C}
t ≤5 s
1.5 W
2.2
Continuous Drain Current
T_A = 25°C
I_D
(Note 2)
Steady T_A = 85°C
Power Dissipation
(Note 2)
State
T_A = 25°C
P_D
2.6
A
1.9
0.7
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
18
A
T_J, −55 to °C
T_STG
150
I_S
1.8
A
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 2 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2006
1
October, 2006 − Rev. 0
http://onsemi.com
V_(BR)DSS
20 V
MOSFET
R_DS(on) Max
65 mW @ 4.5 V
75 mW @ 2.5 V
120 mW @ 1.8 V
V_R Max
20 V
SCHOTTKY DIODE
V_F Typ
0.41 V
I_D Max
3.8 A
2.0 A
1.7 A
I_F Max
2.0 A
D
A
G
S
N−CHANNEL MOSFET
K
SCHOTTKY DIODE
1
WDFN6
CASE 506AN
MARKING
DIAGRAM
1
6
2 ^{JK M G} 5
3 ^G4
JK
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
A1
K
6K
N/C ₂
D3
5G
D
4S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTLJF3118N/D