NTLJF3117P Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package

NTLJF3117P
Power MOSFET and
Schottky Diode
−20 V, −4.1 A, P−Channel, with 2.0 A
Schottky Barrier Diode, 2x2 mm,
mCool] Package
Features
• FETKYt Configuration with MOSFET plus Low Vf Schottky Diode
• mCOOLt Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
• 2x2 mm Footprint Same as SC−88 Package Design
• Independent Pinout Provides Circuit Design Flexibility
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• High Current Schottky Diode: 2 A Current Rating
• This is a Pb−Free Device
Applications
• Optimized for Portable Applications like Cell Phones, Digital
Cameras, Media Players, etc.
• DC−DC Buck Circuit
• Li−Ion Battery Applications
• Color Display and Camera Flash Regulators
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
±8.0
V
Continuous Drain
Current (Note 1)
Steady ^TA ^{= 25°C}
I_D
State _{TA = 85°C}
−3.3
A
−2.4
t ≤ 5 s T_A = 25°C
−4.1
Power Dissipation
(Note 1)
Steady
P_D
State _{TA = 25°C}
t ≤5 s
1.5
W
2.3
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
T_A = 25°C
I_D
Steady T_A = 85°C
State
T_A = 25°C
P_D
−2.3
A
−1.6
0.71
W
Pulsed Drain Current
t_p = 10 ms
I_DM
−20
A
Operating Junction and Storage Temperature T_J, T_STG −55 to °C
150
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
−1.9
A
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm², 2 oz Cu.
http://onsemi.com
V_(BR)DSS
−20 V
MOSFET
R_DS(on) MAX I_D MAX (Note 1)
100 mW @ −4.5 V
135 mW @ −2.5 V
200 mW @ −1.8 V
−4.1 A
V_R MAX
30 V
SCHOTTKY DIODE
V_F TYP
0.47 V
I_F MAX
2.0 A
D
A
G
S
P−CHANNEL MOSFET
K
SCHOTTKY DIODE
MARKING
DIAGRAM
1
WDFN6
CASE 506AN
1
6
2 JHMG 5
3_G4
JH = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
A1
K
6K
N/C ₂
D3
5G
D
4S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
July, 2006 − Rev. 2
Publication Order Number:
NTLJF3117P/D