NTLJF1103P Datasheet, PDF (1/4 Pages) ON Semiconductor – Power MOSFET Schottky Diode

NTLJF1103P
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Power MOSFET and
Schottky Diode
−8 V, −4.3 A, mCool] P−Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm,
WDFN Package
Features
• WDFN 2x2 mm Package with Exposed Drain Pad for
Excellent Thermal Conduction
• Footprint Same as SC−88 Package
• 1.5 V V_GS Rated R_DS(on)
• Low V_F, 2 A Schottky Diode
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• This is a Pb−Free Device
Applications
• DC−DC Buck Converter
• Low Voltage Hard Disk DC Power Source
MOSFET MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−8
V
Gate−to−Source Voltage
V_GS
±6 V
Continuous Drain Current _Steady T_A = 25°C
I_D
(Note 1)
State _{TA = 85°C}
−3.5 A
−2.5
Power Dissipation
(Note 1)
t ≤ 5 s T_A = 25°C
Steady
P_D
State _{TA = 25°C}
t ≤5 s
−4.3
1.5 W
2.3
Continuous Drain Current
T_A = 25°C
I_D
(Note 2)
Steady T_A = 85°C
Power Dissipation
(Note 2)
State
T_A = 25°C
P_D
−2.4 A
−1.7
0.7 W
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(VDD = V, VG = V, IPK = A, RG = W)
I_DM
T_J,
T_STG
I_S
E_AS
−17 A
−55 to °C
150
−1.9 A
TBD mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 2 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. P0
http://onsemi.com
V_(BR)DSS
−8 V
MOSFET
R_DS(on) Max
90 mW @ −4.5 V
120 mW @ −2.5 V
150 mW @ −1.8 V
170 mW @ −1.5 V
I_D Max (Note 1)
−4.3 A
SCHOTTKY DIODE
V_R Max
20 V
V_F Typ
0.37 V
I_F Max
2.0 A
D
A
G
S
P−CHANNEL MOSFET
K
SCHOTTKY DIODE
1
WDFN6
CASE 506AN
MARKING
DIAGRAM
1
6
2 ^{JG M G} 5
3 ^G4
JG
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
A1
K
6K
N/C ₂
D3
5G
D
4S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTLJF1103P/D