NTLJD3182FZ Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool™ Single P−Channel & Schottky Barrier Diode, ESD

NTLJD3182FZ
Power MOSFET and
Schottky Diode
−20 V, −4.0 A, mCoolt Single P−Channel
& Schottky Barrier Diode, ESD
Features
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
• Lowest R_DS(on) Solution in 2x2 mm Package
• Footprint Same as SC−88 Package
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• ESD Protected
• High Current Schottky Diode: 2 A Current Rating
• This is a Pb−Free Device
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment
• Li−Ion Battery Charging and Protection Circuits
• DC−DC Buck Circuit
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
±8.0
V
Continuous Drain
Current (Note 1)
Steady ^TA ^{= 25°C}
I_D
State _{TA = 85°C}
−3.2
A
−2.3
t ≤ 5 s T_A = 25°C
−4.0
Power Dissipation
(Note 1)
Steady
P_D
State _{TA = 25°C}
t ≤5 s
1.5
W
2.3
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
T_A = 25°C
I_D
Steady T_A = 85°C
State
T_A = 25°C
P_D
−2.2
A
−1.6
0.71
W
Pulsed Drain Current
t_p = 10 ms
I_DM
−16
A
Operating Junction and Storage Temperature T_J, T_STG −55 to °C
150
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
−1.0
A
T_L
260
°C
SCHOTTKY MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
V_RRM
30
V
DC Blocking Voltage
V_R
30
V
Average Rectified Forward Current
I_F
2.0
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm², 2 oz Cu).
© Semiconductor Components Industries, LLC, 2008
1
December, 2008 − Rev. 0
http://onsemi.com
P−CHANNEL MOSFET
V_(BR)DSS
R_DS(on) Max
I_D Max
100 mW @ −4.5 V
−20 V
144 mW @ −2.5 V
−4.0 A
200 mW @ −1.8 V
V_R Max
20 V
SCHOTTKY DIODE
V_F Max
0.47 V
I_F Max
2.0 A
S
A
G
D
K
P−CHANNEL MOSFET SCHOTTKY DIODE
D
Pin 1
MARKING
K
DIAGRAM
WDFN6
CASE 506AN
1
2
JJMG
6
5
3^G 4
JJ = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
A1
K
6K
N/C ₂
D3
5G
D
4S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTLJD3180PZ/D