NTLJD3119C_16 Datasheet, PDF (1/10 Pages) ON Semiconductor – Power MOSFET

NTLJD3119C
Power MOSFET
20 V/−20 V, 4.6 A/−4.1 A, Complementary,
2x2 mm, WDFN Package
Features
• Complementary N−Channel and P−Channel MOSFET
• WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
• Footprint Same as SC−88 Package
• Leading Edge Trench Technology for Low On Resistance
• 1.8 V Gate Threshold Voltage
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device
Applications
• Synchronous DC−DC Conversion Circuits
• Load/Power Management of Portable Devices like PDA’s, Cellular
Phones and Hard Drives
• Color Display and Camera Flash Regulators
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
N−Ch
V_DSS
20
V
P−Ch
−20
Gate−to−Source Voltage
N−Ch
V_GS
±8.0
V
P−Ch
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady ^TA ^{= 25°C}
I_D
State _{TA = 85°C}
t ≤ 5 s T_A = 25°C
Steady ^TA ^{= 25°C}
I_D
State _{TA = 85°C}
t ≤ 5 s T_A = 25°C
Steady
P_D
State _{TA = 25°C}
t ≤5 s
3.8
A
2.8
4.6
−3.3
A
−2.4
−4.1
1.5
W
2.3
N−Channel
Continuous Drain
Current (Note 2)
Steady ^{TA = 25°C}
I_D
State _{TA = 85°C}
2.6
A
1.9
P−Channel
Continuous Drain
Current (Note 2)
Steady ^{TA = 25°C}
I_D
State _{TA = 85°C}
−2.3
A
−1.6
Power Dissipation
(Note 2)
Steady
State
T_A = 25°C
P_D
0.71
W
Pulsed Drain Current N−Ch t_p = 10 ms
I_DM
P−Ch
18
A
−20
Operating Junction and Storage Temperature T_J, T_STG −55 to °C
150
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm², 2 oz Cu.
www.onsemi.com
V_(BR)DSS
N−Channel
20 V
P−Channel
−20 V
R_DS(on) MAX
65 mW @ 4.5 V
85 mW @ 2.5 V
120 mW @ 1.8 V
100 mW @ −4.5 V
135 mW @ −2.5 V
200 mW @ −1.8 V
I_D MAX
3.8 A
2.0 A
1.7 A
−4.1 A
−2.0 A
−1.6 A
D2
Pin 1
D1
WDFN6
CASE 506AN
MARKING
DIAGRAM
1
JM M
JM = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
S1 ₁
D1
6 ^D1
G1 ₂
D2
D2 ₃
5 G2
4 S2
(Top View)
ORDERING INFORMATION
Device
Package
Shipping^†
NTLJD3119CTAG WDFN6 3000/Tape & Reel
(Pb−Free)
NTLJD3119CTBG WDFN6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
August, 2016 − Rev. 5
Publication Order Number:
NTLJD3119C/D