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NTLGF3501NT2G Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET and Schottky Diode
NTLGF3501N
Power MOSFET and
Schottky Diode
20 V, 4.6 A FETKY), N−Channel,
2.0 A Schottky Barrier Diode, DFN6
Features
• Flat Lead 6 Terminal Package 3x3x1 mm
• Reduced Gate Charge to Improve Switching Response
• Enhanced Thermal Characteristics
• This is a Pb−Free Device
Applications
• Buck Converter, Inverting Buck/Boost
• High Side DC−DC Conversion Circuits
• Power Management in Portable, HDD and Computing
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain
Current (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
3.4
A
2.5
t ≤ 10 s TA = 25°C
4.6
Power Dissipation
(Note 1)
Steady
PD
State TA = 25°C
t ≤ 10 s
1.74
W
3.13
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
TA = 25°C
ID
Steady TA = 85°C
State
TA = 25°C
PD
2.8
A
2.0
1.14
W
Pulsed Drain Current
tp = 10 ms
IDM
13.8
A
Operating Junction and Storage Temperature TJ, TSTG −55 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS
1.7
A
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.5 in sq).
http://onsemi.com
V(BR)DSS
20 V
MOSFET
RDS(on) TYP
70 mW @ 4.5 V
ID TYP
4.6 A
VR MAX
20 V
SCHOTTKY DIODE
VF TYP
0.36 V
IF MAX
2.0 A
4
Heatsink 1 1 2 3
3
2
5
Heatsink 2
16
6 54
1, 6 = Anode
2, 5 = Source/Cathode
3 = Gate
4 = Drain
MARKING
DIAGRAMS
1 3501
DFN6
AYWW
1
CASE 506AG
G
3501
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTLGF3501NT1G DFN6 3000 / Tape & Reel
(Pb−free)
NTLGF3501NT2G DFN6 3000 / Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 1
Publication Order Number:
NTLGF3501N/D