NTLGD3502N Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 20 V, 5.8 A/4.6 A Dual N−Channel, DFN6 3x3 mm Package

NTLGD3502N
Power MOSFET
20 V, 5.8 A/4.6 A Dual N−Channel,
DFN6 3x3 mm Package
Features
• Exposed Drain Package
• Excellent Thermal Resistance for Superior Heat Dissipation
• Low Threshold Levels
• Low Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin
Environments
• This is a Pb−Free Device
Applications
• DC−DC Converters (Buck and Boost Circuits)
• Power Supplies
• Hard Disk Drives
MOSFET I MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Current (Note 1)
Steady ^TA ^{= 25°C}
I_D
State _{TA = 85°C}
4.3
A
3.0
t ≤ 5.0 s T_A = 25°C
5.8
Power Dissipation
(Note 1)
Steady
State
T_A = 25°C
P_D
1.74
W
Pulsed Drain Current
t ≤10 ms
I_DM
17.2
A
Operating Junction and Storage Temperature T_J, T_STG −55 to _°C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
1.6
A
T_L
260
°C
MOSFET II MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain
Current (Note 1)
Steady ^TA ^{= 25°C}
I_D
State _{TA = 85°C}
3.6
A
2.5
t ≤ 5.0 s T_A = 25°C
4.6
Power Dissipation
(Note 1)
Steady
State
T_A = 25°C
P_D
1.74
W
Pulsed Drain Current
t ≤10 ms
I_DM
13.8
A
Operating Junction and Storage Temperature T_J, T_STG −55 to _°C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
1.7
A
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm², 1 oz. Cu
© Semiconductor Components Industries, LLC, 2006
1
December, 2006 − Rev. 0
http://onsemi.com
V_(BR)DSS
20 V
MOSFET I
R_DS(on) MAX
60 mW @ 4.5 V
V_(BR)DSS
20 V
MOSFET II
R_DS(on) MAX
90 mW @ 4.5 V
I_D MAX
5.8 A
I_D MAX
4.6 A
4
Heatsink 2 1 2 3
3
1
2
Heatsink 1
1
6
2
6 54
5
1 = Gate 1
2, 5 = Drain 1/Source 2
3 = Gate 2
4 = Drain 2
6 = Source 1
MARKING
DIAGRAMS
DFN6
1 ₃₅₀₂
1
CASE 506AG
AYWW
G
3502
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
NTLGD3502NT1G DFN6 3000/Tape & Reel
(Pb−free)
NTLGD3502NT2G DFN6 3000/Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTLGD3502N/D