NTJS4151P_14 Datasheet, PDF (1/5 Pages) ON Semiconductor – Trench Power MOSFET

NTJS4151P
Trench Power MOSFET
−20 V, −4.2 A, Single P−Channel, SC−88
Features
• Leading Trench Technology for Low R_DS(ON) Extending Battery Life
• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
• Gate Diodes for ESD Protection
• Pb−Free Package is Available
Applications
• High Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
V_(BR)DSS
−20 V
http://onsemi.com
R_DS(on) Typ
47 mW @ −4.5 V
70 mW @ −2.5 V
180 mW @ −1.8 V
I_D Max
−4.2 A
SC−88 (SOT−363)
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain
Current (Note 1)
Steady T_A = 25 °C
I_D
State
T_A = 85 °C
−3.3
A
−2.4
t ≤ 5 s T_A = 25 °C
−4.2
Power Dissipation
(Note 1)
Steady T_A = 25 °C P_D
State
1.0
W
Pulsed Drain Current
t_p = 10 ms
I_DM
−10
A
Operating Junction and Storage Temperature
T_J,
−55 to _°C
T_STG
150
Source Current (Body Diode)
I_S
−1.3
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T_L
260
°C
ESD
Human Body Model (HBM) ESD 4000 V
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State
R_qJA
125 °C/W
Junction−to−Ambient − t ≤ 5 s
R_qJA
75
Junction−to−Lead – Steady State
R_qJL
45
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
D
1
6
D
D
2
5
D
G
3
4
S
Top View
1
SC−88/SOT−363
CASE 419B
MARKING DIAGRAM &
PIN ASSIGNMENT
DDS
6
TY M G
G
1
DDG
TY
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information ion page 4 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 3
Publication Order Number:
NTJS4151P/D