NTJS3157N_13 Datasheet, PDF (1/6 Pages) ON Semiconductor – Trench Power MOSFET

NTJS3157N
Trench Power MOSFET
20 V, 4.0 A, Single N−Channel, SC−88
Features
• Leading Trench Technology for Low R_DS(ON) Extending Battery Life
• Fast Switching for Increased Circuit Efficiency
• SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
• These are Pb−Free Devices
Applications
• DC−DC Conversion
• Low Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±8.0
V
Continuous Drain
Current (Note 1)
Steady ^{TA = 25 °C}
I_D
State _{TA = 85 °C}
3.2
A
2.3
t ≤ 5 s T_A = 25 °C
4.0
Power Dissipation
(Note 1)
Steady
State
T_A = 25 °C
P_D
1.0
W
Pulsed Drain Current
t_p = 10 ms
I_DM
10
A
Operating Junction and Storage Temperature
T_J,
−55 to _°C
T_STG
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
1.6
A
T_L
260
°C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State
R_qJA
125 °C/W
Junction−to−Ambient − t ≤ 5 s
R_qJA
80
Junction−to−Lead – Steady State
R_qJL
45
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
V_(BR)DSS
20 V
http://onsemi.com
R_DS(on) Typ
45 mW @ 4.5 V
55 mW @ 2.5 V
70 mW @ 1.8 V
I_D Max
4.0 A
SC−88 (SOT−363)
D
1
6
D
D
2
5
D
G
3
4
S
Top View
1
SOT−363
CASE 419B
STYLE 28
MARKING DIAGRAM &
PIN ASSIGNMENT
DDS
6
T92 M G
G
1
DDG
T92 = Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
January, 2013 − Rev. 3
Publication Order Number:
NTJS3157N/D