NTJS3151P Datasheet, PDF (1/6 Pages) ON Semiconductor – Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88

NTJS3151P
Trench Power MOSFET
12 V, 3.3 A, Single P−Channel,
ESD Protected SC−88
Features
• Leading Trench Technology for Low R_DS(ON) Extending Battery Life
• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)
• Gate Diodes for ESD Protection
• Pb−Free Packages are Available
Applications
• High Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
V_(BR)DSS
−12 V
http://onsemi.com
R_DS(on) Typ
45 mW @ −4.5 V
67 mW @ −2.5 V
133 mW @ −1.8 V
I_D Max
−3.3 A
SC−88 (SOT−363)
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤5 s
Steady
State
T_A = 25 °C
T_A = 85 °C
T_A = 25 °C
T_A = 25 °C
V_DSS
V_GS
I_D
P_D
−12
±12
−2.7
−2.0
−3.3
0.625
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
I_DM
T_J,
T_STG
−8.0
−55 to
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
−0.8
T_L
260
Units
V
V
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Units
Junction−to−Ambient – Steady State
Junction−to−Ambient − t ≤ 5 s
Junction−to−Lead – Steady State
R_qJA
R_qJA
R_qJL
200 °C/W
141
102
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
D
1
6
D
D
2
5
D
G
3
4
S
Top View
D
3 kW
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
DDS
1
SC−88/SOT−363
CASE 419B
STYLE 28
6
TJ M G
G
1
DDG
TJ
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 2
Publication Order Number:
NTJS3151/D