NTJD5121NT1G-001 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET

NTJD5121NT1G-001
Power MOSFET
60 V, 295 mA, Dual N−Channel with ESD
Protection, SC−88
Features
• Low R_DS(on)
• Low Gate Threshold
• Low Input Capacitance
• ESD Protected Gate
• This is a Pb−Free Device
Applications
• Low Side Load Switch
• DC−DC Converters (Buck and Boost Circuits)
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady T_A = 25°C
State
T_A = 85°C
t ≤ 5 s T_A = 25°C
T_A = 85°C
Steady T_A = 25°C
State
V_DSS
V_GS
I_D
P_D
60
V
±20
V
295 mA
212
304
219
250 mW
t≤5s
266
Pulsed Drain Current
t_p = 10 ms
I_DM
900 mA
Operating Junction and Storage Temperature T_J, T_STG −55 to _°C
150
Source Current (Body Diode)
I_S
210 mA
Pulse Source Current (Body Diode) (Note 2)
I_SM
1.94
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T_L
260
°C
Gate−Source ESD Rating (HBM)
ESD_HBM 2000
V
Gate−Source ESD Rating (MM)
ESD_MM
200
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State
R_qJA
Junction−to−Ambient – t ≤ 5 s
R_qJA
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
2. Guaranteed by design.
500 °C/W
470
www.onsemi.com
V_(BR)DSS
60 V
R_DS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
I_D Max
295 mA
SC−88 (SOT−363)
S₁
1
6
D₁
G₁
2
5
G₂
D₂
3
4
S₂
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
1
SC−88/SOT−363
CASE 419B
STYLE 26
TF MG
G
1
S1 G1 D2
TF
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information ion page 4 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
February, 2015 − Rev. 0
Publication Order Number:
NTJD5121NT1G−001/D