NTJD4152P_15 Datasheet, PDF (1/5 Pages) ON Semiconductor – Trench Small Signal MOSFET

NTJD4152P, NVJD4152P
Trench Small Signal
MOSFET
20 V, 0.88 A, Dual P−Channel,
ESD Protected SC−88
Features
• Leading Trench Technology for Low R_DS(ON) Performance
• Small Footprint Package (SC70−6 Equivalent)
• ESD Protected Gate
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Applications
• Load/Power Management
• Charging Circuits
• Load Switching
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State _{TA = 85°C}
−0.88 A
−0.63
Power Dissipation
(Note 1)
Steady T_A = 25°C
P_D
State _{TA = 85°C}
0.272 W
0.141
Continuous Drain
Current (Note 2)
t v 5 s T_A = 25°C
I_D
T_A = 85°C
−1.0
A
−0.72
Power Dissipation
(Note 2)
t v 5 s T_A = 25°C
P_D
T_A = 85°C
0.35 W
0.181
Pulsed Drain Current
t ≤ 10 ms
I_DM
±3.0
A
Operating Junction and Storage Temperature
T_J,
−55 to _°C
T_STG
150
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
−0.48 A
T_L
260
°C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State
R_qJA 460 °C/W
Junction−to−Ambient − t v 5 s
R_qJA 357
Junction−to−Lead – Steady State
R_qJL
226
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), steady state.
2. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.
www.onsemi.com
V_(BR)DSS
−20 V
R_DS(on) Typ
215 mW @ −4.5 V
345 mW @ −2.5 V
600 mW @ −1.8 V
I_D Max
−0.88 A
S₁
1
6
D₁
G₁
2
5
G₂
D₂
3
4
S₂
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
1
SC−88/SOT−363
CASE 419B
STYLE 26
D1 G2 S2
6
XXX MG
G
1
S1 G1 D2
XXX
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
February, 2015 − Rev. 6
Publication Order Number:
NTJD4152P/D