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NTJD4001N Datasheet, PDF (1/6 Pages) ON Semiconductor – Small Signal MOSFET | |||
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NTJD4001N
Small Signal MOSFET
30 V, 250 mA, Dual NâChannel, SCâ88
Features
⢠Low Gate Charge for Fast Switching
⢠Small Footprint â 30% Smaller than TSOPâ6
⢠ESD Protected Gate
⢠PbâFree Package for Green Manufacturing (G Suffix)
Applications
⢠Low Side Load Switch
⢠LiâIon Battery Supplied Devices â Cell Phones, PDAs, DSC
⢠Buck Converters
⢠Level Shifts
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25 °C
State
TA = 85 °C
Steady TA = 25 °C
State
VDSS
VGS
ID
PD
30
V
±20
V
250 mA
180
272 mW
Pulsed Drain Current
t =10 µs
IDM
600 mA
Operating Junction and Storage Temperature TJ, TSTG â55 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8â from case for 10 s)
IS
250 mA
TL
260
°C
1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
1.0 W @ 4.0 V
1.5 W @ 2.5 V
ID Max
250 mA
SOTâ363
SCâ88 (6 LEADS)
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Top View
MARKING DIAGRAM
6
1
SCâ88 / SOTâ363
CASE 419B
STYLE 26
TED
TE = Device Code
D = Date Code
PIN ASSIGNMENT
1
6
Sourceâ1
Drainâ1
Gateâ1
Gateâ2
Drainâ2
Sourceâ2
Top View
ORDERING INFORMATION
Device
Package
Shipping
NTJD4001NT1
SCâ88 3000 Units/Reel
NTJD4001NT1G SCâ88
3000 Units/Reel
(PbâFree)
© Semiconductor Components Industries, LLC, 2003
1
August, 2003 â Rev. 0
Publication Order Number:
NTJD4001N/D
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