NTJD2152P Datasheet, PDF (1/6 Pages) ON Semiconductor – Trench Small Signal MOSFET

NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P−Channel, SC−88
ESD Protection
Features
• Leading –8 V Trench for Low R_DS(ON) Performance
• ESD Protected Gate
• Small Footprint (2 x 2 mm)
• Same Package as SC−70−6
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
Applications
• Load Power switching
• DC−DC Conversion
• Li−Ion Battery Charging Circuits
• Cell Phones, Media Players, Digital Cameras, PDAs
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−8.0
V
Gate−to−Source Voltage
V_GS
±8.0
V
Continuous Drain
Current
(Based on R_qJA)
Steady T_A = 25 °C
I_D
−0.775 A
State
T_A = 85 °C
−0.558
Power Dissipation
(Based on R_qJA)
Steady T_A = 25 °C P_D
State
T_A = 85 °C
0.27 W
0.14
Continuous Drain
Current
(Based on R_qJL)
Steady T_A = 25 °C
I_D
State
T_A = 85 °C
−1.1
A
−0.8
Power Dissipation
(Based on R_qJL)
Steady T_A = 25 °C
State
T_A = 85 °C
P_D
0.55 W
0.29
Pulsed Drain Current
t ≤10 ms
I_DM
±1.2
A
Operating Junction and Storage Temperature
T_J,
−55 to _°C
T_STG
150
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
−0.775 A
T_L
260
°C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Typ Max Unit
Junction−to−Ambient – Steady State
R_qJA 400 460 °C/W
Junction−to−Lead (Drain) – Steady State R_qJL 194 226
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
http://onsemi.com
V_(BR)DSS
−8 V
R_DS(on) TYP
0.22 W @ −4.5 V
0.32 W @ −2.5 V
0.51 W @ −1.8 V
I_D Max
−0.775 A
SOT−363
SC−88 (6 LEADS)
S₁
1
6
D₁
G₁
2
5
G₂
D₂
3
4
S₂
Top View
6
1
SC−88 (SOT−363)
CASE 419B
Style 26
MARKING DIAGRAM
TAD
TA = Device Code
D = Date Code
PIN ASSIGNMENT
1
6
Source−1
Drain−1
Gate−1
Gate−2
Drain−2
Source−2
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
January, 2004 − Rev. 2
Publication Order Number:
NTJD2152/D