NTJD1155LT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET High Side Load Switch with Level−Shift, P−Channel SC−88

NTJD1155L
Power MOSFET
8 V, +1.3 A, High Side Load Switch with
Level−Shift, P−Channel SC−88
The NTJD1155L integrates a P and N−Channel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The P−Channel device is specifically
designed as a load switch using ON Semiconductor state−of−the−art
trench technology. The N−Channel, with an external resistor (R1),
functions as a level−shift to drive the P−Channel. The N−Channel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
V_IN and V_ON/OFF.
Features
• Extremely Low R_DS(on) P−Channel Load Switch MOSFET
• Level Shift MOSFET is ESD Protected
• Low Profile, Small Footprint Package
• V_IN Range 1.8 to 8.0 V
• ON/OFF Range 1.5 to 8.0 V
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Input Voltage (V_DSS, P−Ch)
V_IN
8.0
V
ON/OFF Voltage (V_GS, N−Ch)
V_ON/OFF 8.0
V
Continuous Load Current Steady T_A = 25°C
I_L
(Note 1)
State _{TA = 85°C}
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State _{TA = 85°C}
±1.3
A
±0.9
0.40 W
0.20
Pulsed Load Current
t_p = 10 ms
I_LM
±3.9
A
Operating Junction and Storage Temperature
T_J,
−55 to °C
T_STG
150
Source Current (Body Diode)
I_S
−0.4
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R_qJA
320 °C/W
Junction−to−Foot – Steady State (Note 1)
R_qJF
220
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
1
November, 2012 − Rev. 5
http://onsemi.com
V_(BR)DSS
8.0 V
R_DS(on) TYP
130 mW @ −4.5 V
170 mW @ −2.5 V
260 mW @ −1.8 V
I_D MAX
±1.3 A
SIMPLIFIED SCHEMATIC
4
2,3
Q2
6
5
Q1
1
MARKING
SC−88
DIAGRAM
(SOT−363)
1
CASE 419B
STYLE 30
TB M G
G
TB = Device Code
M = Date Code
1
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
D1/G2 G1 S2
654
1 23
S1 D2 D2
ORDERING INFORMATION
Device
Package
Shipping^†
NTJD1155LT1G SC−88 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTJD1155L/D