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NTHS5443 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET
NTHS5443
Power MOSFET
−20 V, −4.9 A, P−Channel ChipFETt
Features
• Low RDS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package Saves Board Space
• Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) TYP
56 mW @ −4.5
ID MAX
−4.9 A
S
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State Unit
Drain−Source Voltage
VDS
−20
V
Gate−Source Voltage
VGS
"12
V
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
ID
A
−4.9 −3.6
−3.5 −2.6
Pulsed Drain Current
IDM
"15
A
Continuous Source Current (Note 1)
IS
−4.9 −3.6 A
Maximum Power Dissipation (Note 1) PD
W
TA = 25°C
2.5
1.3
TA = 85°C
1.3
0.7
Operating Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
G
D
P−Channel MOSFET
8
1
ChipFET
CASE 1206A
STYLE 1
PIN
CONNECTIONS
MARKING
DIAGRAM
D8
1D
1
8
D7
2D
2
7
D6
3D
3
6
S5
4G
4
5
A4 = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTHS5443T1 ChipFET 3000/Tape & Reel
NTHS5443T1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
July, 2005 − Rev. 6
Publication Order Number:
NTHS5443T1/D