NTHS5404 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NTHS5404
Power MOSFET
20 V, 7.2 A, N−Channel ChipFETE
Features
• Low R_DS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package Saves Board Space
• Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
V_(BR)DSS
20 V
R_DS(on) TYP
25 mW @ 4.5 V
I_D MAX
7.2 A
D
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 Secs State Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
(T_J = 150°C) (Note 1)
T_A = 25°C
T_A = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1)
V_DS
20
V
V_GS
"12
V
I_D
A
7.2
5.2
5.2
3.8
I_DM
"20
A
I_S
7.2
5.2
A
Maximum Power Dissipation
(Note 1)
T_A = 25°C
T_A = 85°C
P_D
W
2.5
1.3
1.3
0.7
Operating Junction and Storage T_J, T_stg
−55 to +150
°C
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
G
S
N−Channel MOSFET
ChipFET
CASE 1206A
STYLE 1
PIN
CONNECTIONS
D⁸
D7
D6
S5
1D
2D
3D
4G
MARKING
DIAGRAM
1
8
2
7
3
6
4
5
A2 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping^†
NTHS5404T1 ChipFET 3000/Tape & Reel
NTHS5404T1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
October, 2004 − Rev. 3
Publication Order Number:
NTHS5404T1/D