NTHS5402T1 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET N−Channel ChipFET-TM

NTHS5402T1
Power MOSFET
N−Channel ChipFETE
4.9 Amps, 30 Volts
Features
• Low R_DS(on) for Higher Efficiency
• Miniature ChipFET Surface Mount Package
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
4.9 AMPS
30 VOLTS
R_DS(on) = 35 mW
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
(T_J = 150°C) (Note 1.)
T_A = 25°C
T_A = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1.)
V_DS
30
V
V_GS
"20
V
I_D
A
"6.7
"4.8
"4.9
"3.5
I_DM
"20
A
I_S
2.1
1.1
A
Maximum Power Dissipation
(Note 1.)
T_A = 25°C
T_A = 85°C
P_D
W
2.5
1.3
1.3
0.7
Operating Junction and Storage T_J, T_stg
−55 to +150
°C
Temperature Range
1. Surface Mounted on 1″ x 1″ FR4 Board.
D
G
S
N−Channel MOSFET
ChipFET
CASE 1206A
STYLE 1
PIN CONNECTIONS
MARKING
DIAGRAM
D⁸
1D
1
8
D7
2D
2
7
D6
3D
3
6
S5
4G
4
5
A8 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHS5402T1 ChipFET 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev. XXX
Publication Order Number:
NTHS5402T1/D