NTHS4501N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 6.7 A, Single N−Channel, ChipFET Package

NTHS4501N
Power MOSFET
30 V, 6.7 A, Single N−Channel,
ChipFETt Package
Features
• Planar Technology Device Offers Low R_DS(on) and Fast Switching Speed
in a ChipFET Package
• Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
Ideal Device for Applications Where Board Space is at a Premium.
• ChipFET Package Exhibits Excellent Thermal Capabilities Where
Heat Transfer is Required.
• Pb−Free Package is Available
Applications
• Buck and Boost Converters
• Optimized for Battery and Load Management Applications in
Portable Equipment such as Notebook Computers, MP3 Players,
Cell Phones, Digital Cameras, Personal Digital Assistants and Other
Portable Applications
• Charge Control in Battery Chargers
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Steady T_A = 25°C
I_D
Current (Note 1) State
T_A = 85°C
4.9
A
3.5
t ≤ 5 s T_A = 25°C
6.7
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
T_A = 85°C
1.3
W
0.7
t ≤ 5 s T_A = 25°C
2.5
Pulsed Drain Current t_p = 10 ms
I_DM
20
A
Operating Junction and Storage Temperature T_J,
−55 to °C
T_STG
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
1.1
A
T_L
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1) R_qJA
95
°C/W
Junction−to−Foot (Drain) Steady State (Note 1)
R_qJF
20
Junction−to−Ambient – t ≤ 5 s (Note 1)
R_qJA
50
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) Typ
30 mW @ 10 V
40 mW @ 4.5 V
D
I_D Max
6.7 A
G
S
N−Channel MOSFET
MARKING DIAGRAM
8 AND PIN ASSIGNMENT
1
ChipFET
CASE 1206A
STYLE 1
D DDS
D2 M
G
1
D DDG
D2
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
NTHS4501NT1
NTHS4501NT1G
ChipFET
ChipFET
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
February, 2007 − Rev. 4
Publication Order Number:
NTHS4501N/D