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NTHS4166N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFET Package
NTHS4166N
Power MOSFET
30 V, 8.2 A, Single N-Channel,
ChipFETt Package
Features
•ăTrench Technology
•ăLow RDS(on) to Minimize Conduction Losses
•ăLeadless ChipFET Package has 40% Smaller Footprint than TSOP-6
•ăExcellent Thermal Capabilities
•ăThis is a Pb-Free Device
Applications
•ăLoad Switching
•ăDC-DC Converters
•ăLow Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGS
±20
V
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
ID
TA = 85°C
6.6
A
4.8
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
Steady
Continuous Drain
State TA = 25°C
ID
Current RqJA (Note 2)
TA = 85°C
1.5
W
4.9
A
3.6
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.8
W
Continuous Drain
TA = 25°C
ID
Current RqJA, t v 5 s
(Note 1)
Steady TA = 85°C
State
Power Dissipation
TA = 25°C
PD
RqJA (Note 1)
8.2
A
5.9
2.2
W
Pulsed Drain Current TA = 25°C,
tp = 10 ms
IDM
32
A
Operating Junction and Storage Temperature TJ,
-55 to °C
TSTG
150
Source Current (Body Diode) RqJF
IS
2.6
A
Single Pulse Drain-to-Source Avalanche
EAS
20
mJ
Energy TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 20 Apk, L = 0.1 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq. pad, 1 oz Cu.
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) Max
22 mW @ 10 V
27 mW @ 4.5 V
D
ID Max
8.2 A
G
S
N-Channel MOSFET
MARKING DIAGRAM
AND PIN ASSIGNMENT
8
D DDS
1
ChipFET
CASE 1206A
STYLE 1
466 M
G
1
D DDG
466 = Specific Device Code
M = Month Code
G = Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTHS4166NT1G ChipFET 3000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 0
Publication Order Number:
NTHS4166N/D