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NTHS4111P_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFET | |||
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NTHS4111P
Power MOSFET
â30 V, â6.1 A, Single PâChannel, ChipFETt
Features
⢠Offers an Ultra Low RDS(on) Solution in the ChipFET Package
⢠ChipFET Package 40% Smaller Footprint than TSOPâ6
⢠Low Profile (<1.1 mm) for Extremely Thin Environments
⢠Standard Logic Level Gate Drive
⢠PbâFree Package is Available
Applications
⢠Notebook Computer Load Switch
⢠Battery and Load Management Applications in Portable Equipment
⢠Charge Control in Battery Chargers
⢠Buck and Boost Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
â30
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain
Current (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
â4.4
A
â3.2
t ⤠10 s TA = 25°C
â6.1
Power Dissipation
(Note 1)
Steady TA = 25°C PD
State
1.3
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t ⤠10 s
Steady TA = 25°C
ID
State TA = 85°C
TA = 25°C PD
2.5
â3.3
A
â2.3
0.7
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
â30
A
TJ,
â55 to °C
TSTG
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
â2.1
A
TL
260
°C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
JunctionâtoâAmbient â Steady State (Note 1)
JunctionâtoâAmbient â t ⤠10 s (Note 1)
JunctionâtoâAmbient â Steady State (Note 2)
RqJA
RqJA
RqJA
95 °C/W
50
175
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfaceâmounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surfaceâmounted on FR4 board using the minimum recommended pad size
(Cu area = 0.045 in sq).
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 â Rev. 2
http://onsemi.com
V(BR)DSS
â30 V
RDS(on) Typ
33 mW @ â10 V
52 mW @ â4.5 V
S
ID Max
â6.1 A
G
D
PâChannel MOSFET
8
1
ChipFET
CASE 1206A
STYLE 1
PIN
CONNECTIONS
MARKING
DIAGRAM
D8
1D
1
8
D7
2D
2
7
D6
3D
3
6
S5
4G
4
5
TH
= Specific Device Code
M
= Date Code
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NTHS4111PT1 ChipFET 3000/Tape & Reel
NTHS4111PT1G
ChipFET
(Pbâfree)
3000/Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHS4111P/D
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