NTHD5905T1 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 4 Amps, 20 Volts

NTHD5905T1
Power MOSFET
Dual P−Channel ChipFETt
3.0 Amps, 8 Volts
Features
• Low R_DS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
DUAL P−CHANNEL
3.0 AMPS, 8 VOLTS
R_DS(on) = 90 mW
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
(T_J = 150°C) (Note 1)
T_A = 25°C
T_A = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1)
V_DS
−8.0
V
V_GS
"8.0
V
I_D
A
"4.1
"2.9
"3.0
"2.2
I_DM
"10
A
I_S
−1.8 −0.9
A
Maximum Power Dissipation
(Note 1)
T_A = 25°C
T_A = 85°C
P_D
W
2.1
1.1
1.1
0.6
Operating Junction and Storage T_J, T_stg
−55 to +150
°C
Temperature Range
1. Surface Mounted on 1″ x 1″ FR4 Board.
S1
G1
S2
G2
D1
P−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D1 8
1 S1
1
8
D1 7
2 G1
2
7
D2 6
3 S2
3
6
D2 5
4 G2
4
5
A9 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD5905T1 ChipFET 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev. XXX
Publication Order Number:
NTHD5905T1/D