NTHD5904T1 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET Dual N-Channel

NTHD5904T1
Power MOSFET
Dual N−Channel
3.1 Amps, 20 Volts
Features
• Low R_DS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFETt Surface Mount Package Saves Board Space
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
DUAL N−CHANNEL
3.1 AMPS, 20 VOLTS
R_DS(on) = 75 mW
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
(T_J = 150°C) (Note 1)
T_A = 25°C
T_A = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1)
V_DS
20
V
V_GS
"12
V
I_D
A
"4.2
"3.0
"3.1
"2.2
I_DM
"10
A
I_S
1.8
0.9
A
Maximum Power Dissipation
(Note 1)
T_A = 25°C
T_A = 85°C
P_D
W
2.1
1.1
1.1
0.6
Operating Junction and Storage T_J, T_stg
−55 to +150
°C
Temperature Range
1. Surface Mounted on 1″ x 1″ FR4 Board.
D1
D2
G1
G2
S1
S2
N−Channel MOSFET N−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D₁ 8
1 S₁ 1
8
D₁ 7
2 G₁ 2
7
D₂ 6
3 S₂ 3
6
D₂ 5
4 G₂ 4
5
A1 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD5904T1 ChipFET 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev. XXX
Publication Order Number:
NTHD5904T1/D