NTHD4P02F Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET and Schottky Diode

NTHD4P02F
Power MOSFET and
Schottky Diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky Barrier Diode, ChipFETt
Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Similar Thermal
Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Ultra Low VF Schottky
• Pb−Free Package is Available
Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Units
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain
Current
Steady ^{TJ = 25°C}
State _{TJ = 85°C}
I_D
−2.2
A
−1.6
t v 5 s T_J = 25°C
I_D
−3.0
A
Pulsed Drain
Current
t_p = 10 ms
I_DM
−9.0
A
Power Dissipation _Steady T_J = 25°C
P_D
State _{TJ = 85°C}
1.1
W
0.6
t v 5 s T_J = 25°C
2.1
Continuous Source Current (Body Diode)
I_S
−2.1
A
Operating Junction and Storage
Temperature
T_J, T_STG −55 to 150 °C
Lead Temperature for Soldering Purposes
T_L
(1/8″ from case for 10 s)
260
°C
SCHOTTKY DIODE MAXIMUM RATINGS
(T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
V_RRM
20
V
DC Blocking Voltage
V_R
20
V
Average Rectified
Steady
I_F
Forward Current
State _{TJ = 25°C}
tv5s
2.2
A
3.0
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2004
1
October, 2004 − Rev. 4
http://onsemi.com
V_(BR)DSS
−20 V
MOSFET
R_DS(on) TYP
−130 mW @ −4.5 V
200 mW @ −2.5 V
V_R MAX
20 V
SCHOTTKY DIODE
V_F TYP
0.510 V
I_D MAX
−3.0 A
I_F MAX
3.0 A
S
A
G
D
P−Channel MOSFET
C
SCHOTTKY DIODE
ChipFET
CASE 1206A
STYLE 3
PIN
CONNECTIONS
MARKING
DIAGRAM
1
8
A
C
1
8
2
7
A
C
2
7
6
S
D
3
6
3
G
D
4
5
4
5
C2 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping^†
NTHD4P02FT1 ChipFET 3000/Tape & Reel
NTHD4P02FT1G ChipFET 3000/Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD4P02F/D