NTHD4N02F Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET and Schottky Diode

NTHD4N02F
Power MOSFET and
Schottky Diode
20 V, 3.9 A, N−Channel, with 3.7 A
Schottky Barrier Diode, ChipFETt
Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Better Thermals
• Super Low Gate Charge MOSFET
• Ultra Low V_F Schottky
• Pb−Free Package is Available
Applications
• Fast Switching, low Gate Charge for Dc to Dc Buck and Boost
Converters
• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media
Players
• Load Side Switching
MOSFET MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain
Current
Steady ^{TJ = 25°C}
State _{TJ = 85°C}
I_D
2.9
A
2.1
t v 5 s T_J = 25°C
3.9
Pulsed Drain Current
t_p=10 ms
I_DM
12
A
Power Dissipation
Steady ^{TJ = 25°C}
P_D
State _{TJ = 85°C}
0.91
W
0.36
t v 5 s T_J = 25°C
2.1
Continuous Source Current (Body Diode)
I_S
2.6
A
Operating Junction and Storage
Temperature
T_J, T_STG −55 to 150 °C
Lead Temperature for Soldering Purposes
T_L
(1/8” from case for 10 s)
260
°C
SCHOTTKY DIODE MAXIMUM RATINGS
(T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
V_RRM
20
V
DC Blocking Voltage
V_R
20
V
Average Rectified
Steady
I_F
Forward Current
State _{TJ = 25°C}
tv5s
2.2
A
3.7
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
V_(BR)DSS
20 V
MOSFET
R_DS(on) TYP
60 mW @ 4.5 V
80 mW @ 2.5 V
V_R MAX
20 V
SCHOTTKY DIODE
V_F TYP
0.35 V
I_D MAX
3.9 A
I_F MAX
3.7 A
D1
A
G1
S1
N−Channel MOSFET
C
SCHOTTKY DIODE
ChipFET]
CASE 1206A
STYLE 3
PIN
CONNECTIONS
A1
8C
A2
S3
7C
6
D
G4
5D
MARKING
DIAGRAM
1
2
3
4
C2 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping^†
NTHD4N02FT1 ChipFET
NTHD4N02FT1G
ChipFET
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
October, 2004 − Rev. 7
Publication Order Number:
NTHD4N02F/D