NTHD4502N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET

NTHD4502N
Power MOSFET
30 V, 3.9 A, Dual N−Channel ChipFETt
Features
• Planar Technology Device Offers Low R_DS(on) and Fast Switching Speed
• Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
Ideal Device for Applications Where Board Space is at a Premium.
• ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
• Pb−Free Package is Available
Applications
• DC−DC Buck or Boost Converters
• Low Side Switching
• Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Current (Note 1)
Steady ^{TA = 25°C}
I_D
State _{TA = 85°C}
2.9
A
2.1
Power Dissipation
(Note 1)
t ≤ 5 s T_A = 25°C
Steady
P_D
State _{TA = 25°C}
t≤5s
3.9
1.13
W
2.1
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
T_A = 25°C
I_D
Steady T_A = 85°C
State _{TA = 25°C}
P_D
2.2
A
1.6
0.64
W
Pulsed Drain Current
t_p = 10 ms
I_DM
12
A
ESD Capability
(Note 3)
C = 100 pF,
ESD−
125
V
R_S = 1500 W
HBM
Operating Junction and Storage Temperature T_J,
−55 to °C
T_STG
150
Source Current (Body Diode)
I_S
2.5
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T_L
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: HBM Class 0.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
80 mW @ 10 V
110 mW @ 4.5 V
I_D MAX
3.9 A
D₁, D₂
G₁, G₂
S₁, S₂
N−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D₁ 8
1 S₁
1
8
D₁ 7
2 G₁ 2
7
D₂ 6
3 S₂
3
6
D₂ 5
4 G₂ 4
5
C5 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping^†
NTHD4502NT1 ChipFET 3000/Tape & Reel
NTHD4502NT1G
ChipFET
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
October, 2004 − Rev. 4
Publication Order Number:
NTHD4502N/D