NTHD4102P_05 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET

NTHD4102P
Power MOSFET
−20 V, −4.1 A, Dual P−Channel ChipFETt
Features
• Offers an Ultra Low R_DS(ON) Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
• Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
• Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
• Pb−Free Package is Available
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, and PDAs
• Charge Control in Battery Chargers
• Buck and Boost Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
"8.0
V
Continuous Drain
T_A = 25°C
I_D
Current (Note 1) Steady State
T_A = 85°C
−2.9
A
−2.1
t ≤ 10 s
T_A = 25°C
−4.1
Power Dissipation Steady State
P_D
(Note 1)
t ≤ 10 s
T_A = 25°C
1.1
W
2.1
Pulsed Drain
Current
tp = 10 ms
I_DM
−13.8 A
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
T_J,
−55 to °C
T_STG
150
I_S
−1.1
A
T_L
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient, Steady State (Note 1)
Junction−to−Ambient, t ≤ 10s (Note 1)
R_qJA
113 °C/W
60
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
© Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 5
http://onsemi.com
V_(BR)DSS
−20 V
R_DS(ON) TYP
I_D MAX
64 mW @ −4.5 V
85 mW @ −2.5 V
−4.1 A
120 mW @ −1.8 V
S₁
S₂
G₁
G₂
D₁
P−Channel MOSFET
D₂
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D₁ 8
1 S₁
1
8
D₁ 7
2 G₁ 2
7
D₂ 6
3 S₂
3
6
D₂ 5
4 G₂ 4
5
C7 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
NTHD4102PT1 ^{ChipFET 3000/Tape & Reel}
NTHD4102PT1G ^ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD4102P/D