NTHD3133PF Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET™

NTHD3133PF
Power MOSFET and
Schottky Diode
-20 V, FETKYt, P-Channel, -4.4 A, with
3.7 A Schottky Barrier Diode, ChipFETt
Features
•ăLeadless SMD Package Featuring a MOSFET and Schottky Diode
•ă40% Smaller than TSOP-6 Package
•ăLeadless SMD Package Provides Great Thermal Characteristics
•ăIndependent Pinout to each Device to Ease Circuit Design
•ăTrench P-Channel for Low On Resistance
•ăUltra Low V_F Schottky
•ăThese are Pb-Free Devices
Applications
•ăLi-Ion Battery Charging
•ăHigh Side DC-DC Conversion Circuits
•ăHigh Side Drive for Small Brushless DC Motors
•ăPower Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Units
Drain-to-Source Voltage
V_DSS
-20
V
Gate-to-Source Voltage
V_GS
±8.0
V
Continuous Drain
Steady ^TJ ^{= 25°C}
I_D
Current (Note 1)
State _{TJ = 85°C}
-3.2
A
-2.3
t ≤ 5 s T_J = 25°C
-4.4
Power Dissipation
(Note 1)
Steady
P_D
State _{TJ = 25°C}
t≤5s
1.1
W
2.1
Pulsed Drain Current
t_p = 10 ms
I_DM
-13
A
Operating Junction and Storage Temperature T_J, T_STG -55 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
2.5
A
T_L
260
°C
SCHOTTKY DIODE MAXIMUM RATINGS
(T_J = 25°C unless otherwise noted)
Parameter
Symbol
Value
Units
Peak Repetitive Reverse Voltage
V_RRM
20
V
DC Blocking Voltage
V_R
20
V
Average Rectified
Steady
I_F
Forward Current
State _{TJ = 25°C}
t≤5s
2.2
V
3.7
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
http://onsemi.com
V_(BR)DSS
-20 V
V_R MAX
20 V
MOSFET
R_DS(on) TYP
64 mW @ -4.5 V
85 mW @ -2.5 V
SCHOTTKY DIODE
V_F TYP
0.35 V
I_D MAX
-4.4 A
I_F MAX
3.7 A
S
A
G
D
P-Channel MOSFET
C
Schottky Diode
8
1
ChipFET
CASE 1206A
STYLE 3
PIN
CONNECTIONS
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
MARKING
DIAGRAM
1
8
2
7
3
6
4
5
DA = Specific Device Code
M = Month Code
G = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2007
1
October, 2007 - Rev. 0
Publication Order Number:
NTHD3133PF/D