NTHD3102CT1G Datasheet, PDF (1/11 Pages) ON Semiconductor – Power MOSFET Complementary, 20 V, +5.5 A /−4.2 A, ChipFET

NTHD3102C
Power MOSFET
Complementary, 20 V, +5.5 A /−4.2 A,
ChipFETt
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Leading Edge Trench Technology for Low On Resistance
• Reduced Gate Charge to Improve Switching Response
• This is a Pb−Free Device
Applications
• DC−DC Conversion Circuits
• Load/Power Switching
• Single or Dual Cell Li−Ion Battery Supplied Devices
• Ideal for Power Management Applications in Portable, Battery
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V_(BR)DSS
N−Channel
20 V
P−Channel
−20 V
R_DS(on) TYP
29 mW @ 4.5 V
37 mW @ 2.5 V
48 mW @ 1.8 V
64 mW @ 4.5 V
83 mW @ 2.5 V
105 mW @ 1.8 V
I_D MAX
(Note 1)
5.5 A
−4.2 A
D1
S2
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Ch
P−Ch
V_DSS
20
V
V_GS
"8.0
V
"8.0
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady T_A = 25°C
I_D
State
T_A = 85°C
t ≤ 5 s T_A = 25°C
Steady T_A = 25°C
I_D
State
T_A = 85°C
t ≤ 5 s T_A = 25°C
Steady T_A = 25°C
P_D
State
4.0
A
2.9
5.5
3.1
A
2.2
4.2
1.1
W
t≤5s
2.1
Gate−to−Source ESD Rating −
(Human Body Model, Method 3015)
ESD
100
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
G1
G2
S1
N−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D₁ 8
1 S₁ 1
8
D₁ 7
2 G₁ 2
7
D₂ 6
3 S₂ 3
6
D₂ 5
4 G₂ 4
5
(Bottom View)
(Top View)
D6 = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
September, 2006 − Rev. 2
Publication Order Number:
NTHD3102C/D