NTHD3101F Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET and Schottky Diode

NTHD3101F
Power MOSFET and
Schottky Diode
−20 V, FETKYt, P−Channel, −4.4 A, with
4.1 A Schottky Barrier Diode, ChipFETt
Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Trench P−Channel for Low On Resistance
• Ultra Low V_F Schottky
• Pb−Free Packages are Available
Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Units
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
±8.0
V
Continuous Drain
Steady ^TJ ^{= 25°C}
I_D
Current (Note 1)
State _{TJ = 85°C}
−3.2
A
−2.3
t ≤ 5 s T_J = 25°C
−4.4
Power Dissipation
(Note 1)
Steady
P_D
State _{TJ = 25°C}
t≤5s
1.1
W
2.1
Pulsed Drain Current
t_p = 10 ms
I_DM
−13
A
Operating Junction and Storage Temperature T_J, T_STG −55 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
2.5
A
T_L
260
°C
SCHOTTKY DIODE MAXIMUM RATINGS
(T_J = 25°C unless otherwise noted)
Parameter
Symbol
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified
Forward Current
Steady
State
t≤5s
T_J = 25°C
V_RRM
V_R
I_F
Value
20
20
2.2
Units
V
V
V
4.1
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
http://onsemi.com
V_(BR)DSS
−20 V
V_R MAX
20 V
MOSFET
R_DS(on) TYP
64 mW @ −4.5 V
85 mW @ −2.5 V
SCHOTTKY DIODE
V_F TYP
0.510 V
I_D MAX
−4.4 A
I_F MAX
4.1 A
S
A
G
D
P−Channel MOSFET
C
Schottky Diode
8
1
ChipFET
CASE 1206A
STYLE 3
PIN
CONNECTIONS
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
MARKING
DIAGRAM
1
8
2
7
3
6
4
5
D1 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 3
Publication Order Number:
NTHD3101F/D